It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Metal halide perovskites are promising for next-generation flexible photodetectors owing to their low-temperature solution processability, mechanical flexibility, and excellent photoelectric properties. However, the defects and notorious ion migration in polycrystalline metal halide perovskites often lead to high and unstable dark current, thus deteriorating their detection limit and long-term operations. Here, we propose an electrical field modulation strategy to significantly reduce the dark current of metal halide perovskites-based flexible photodetector more than 1000 times (from ~5 nA to ~5 pA). Meanwhile, ion migration in metal halide perovskites is effectively suppressed, and the metal halide perovskites-based flexible photodetector shows a long-term continuous operational stability (~8000 s) with low signal drift (~4.2 × 10−4 pA per second) and ultralow dark current drift (~1.3 × 10−5 pA per second). Benefitting from the electrical modulation strategy, a high signal-to-noise ratio wearable photoplethysmography sensor and an active-matrix photodetector array for weak light imaging are successfully demonstrated. This work offers a universal strategy to improve the performance of metal halide perovskites for wearable flexible photodetector and image sensor applications.
Defects and ion migration in perovskites hinder their potential as active material for flexible photodetectors. Here, the authors provide an electrical field modulation strategy to enhance the operational stability and the signal-to-noise ratio of flexible perovskite photodetectors.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details






1 Zhejiang University, College of Information Science and Electronic Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Westlake University, Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315)
2 Zhejiang University, State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
3 Westlake University, Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315); Zhejiang University, School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
4 Westlake University, Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315); Westlake Institute for Advanced Study, Institute of Advanced Technology, Hangzhou, China (GRID:grid.511490.8)