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© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Thin nanocrystalline transparent Al-doped ZnO (1–10 at.% Al) films were synthesized by solid-phase pyrolysis at 700 °C. Synthesized Al-doped ZnO films were investigated by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM, TEM). All obtained materials were crystallized into the wurtzite structure, which was confirmed by XRD. The material crystallinity decreases with the introduction of aluminum. SEM and TEM showed that the films are continuous and have a uniform distribution of nanoparticles with an average size of 15–20 nm. TEM confirmed the production of Al-doped ZnO films. The transmittance of Al-doped ZnO films in the range of 400–1000 nm is more than 94%. The introduction of 1% Al into ZnO leads to a narrowing of the band gap compared to ZnO to a minimum value of 3.26 eV and a sharp decrease in the response time to the radiation exposure with a wavelength of 400 nm. An increase in aluminum concentration leads to a slight increase in the band gap, which is associated with the Burstein–Moss effect. The minimum response time (8 s) was shown for film containing 10% Al, which is explained by the shortest average lifetime of charge carriers (4 s).

Details

Title
Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications
Author
Petrov, Victor V 1   VIAFID ORCID Logo  ; Ignatieva, Irina O 2 ; Volkova, Maria G 3 ; Gulyaeva, Irina A 1 ; Pankov, Ilya V 4   VIAFID ORCID Logo  ; Bayan, Ekaterina M 2   VIAFID ORCID Logo 

 Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, Taganrog 347922, Russia; [email protected] (M.G.V.); [email protected] (I.A.G.) 
 Faculty of Chemistry, Southern Federal University, Rostov-on-Don 344090, Russia; [email protected] (I.O.I.); [email protected] (E.M.B.) 
 Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, Taganrog 347922, Russia; [email protected] (M.G.V.); [email protected] (I.A.G.); Faculty of Chemistry, Southern Federal University, Rostov-on-Don 344090, Russia; [email protected] (I.O.I.); [email protected] (E.M.B.) 
 Institute of Physical and Organic Chemistry, Southern Federal University, Rostov-on-Don 344090, Russia; [email protected] 
First page
2348
Publication year
2023
Publication date
2023
Publisher
MDPI AG
e-ISSN
20794991
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2857413539
Copyright
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.