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Abstract
Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this limitation, this study presents the development of a high-density vertical structure for the 3T ECRAM. In addition, complementary metal-oxide semiconductor (CMOS)-compatible materials and 8-inch wafer-based CMOS fabrication processes were utilized to verify the feasibility of mass production. The achievements of this work demonstrate the potential for high-density integration and mass production of 3T ECRAM devices.
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Details
1 Kwangwoon University, Department of Electronic Materials Engineering, Seoul, Republic of Korea (GRID:grid.411202.4) (ISNI:0000 0004 0533 0009)
2 Kyungpook National University, School of Electronic and Electrical Engineering, Daegu, South Korea (GRID:grid.258803.4) (ISNI:0000 0001 0661 1556)