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Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
Down-scaled ferroelectricity normally diminishes due to the arising depolarization field. Here, the authors realize a 0D ferroelectric diode device taking advantage of the sliding at the van der Waals interface by the two crossed tungsten disulfide nanotubes.
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1 School of Physics, Beijing Institute of Technology, Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246); School of Physics, Beijing Institute of Technology, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246)
2 Weizmann Institute of Science, Department of Molecular Chemistry and Materials Science, Rehovot, Israel (GRID:grid.13992.30) (ISNI:0000 0004 0604 7563)
3 Holon Institute of Technology, Faculty of Sciences, Holon, Israel (GRID:grid.417597.9) (ISNI:0000 0000 9534 2791)