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Abstract
Highlights
The (011) facet has excellent charge transport properties achieving closer alignment of energy levels.
By exploiting the (011) facet a device (0.06 cm2) and a module (29 cm2) achieved power conversion efficiencies of 25.24% and 21.12%, respectively.
Perovskite crystal facets greatly impact the performance and stability of their corresponding photovoltaic devices. Compared to the (001) facet, the (011) facet yields better photoelectric properties, including higher conductivity and enhanced charge carrier mobility. Thus, achieving (011) facet-exposed films is a promising way to improve device performance. However, the growth of (011) facets is energetically unfavorable in FAPbI3 perovskites due to the influence of methylammonium chloride additive. Here, 1-butyl-4-methylpyridinium chloride ([4MBP]Cl) was used to expose (011) facets. The [4MBP]+ cation selectively decreases the surface energy of the (011) facet enabling the growth of the (011) plane. The [4MBP]+ cation causes the perovskite nuclei to rotate by 45° such that (011) crystal facets stack along the out-of-plane direction. The (011) facet has excellent charge transport properties and can achieve better-matched energy level alignment. In addition, [4MBP]Cl increases the activation energy barrier for ion migration, suppressing decomposition of the perovskite. As a result, a small-size device (0.06 cm2) and a module (29.0 cm2) based on exposure of the (011) facet achieved power conversion efficiencies of 25.24% and 21.12%, respectively.
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Details
1 North China Electric Power University, Beijing Key Laboratory of Novel Thin-Film Solar Cells, Beijing, People’s Republic of China (GRID:grid.261049.8) (ISNI:0000 0004 0645 4572); Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut des Sciences et Ingénierie Chimiques, Lausanne, Switzerland (GRID:grid.5333.6) (ISNI:0000000121839049)
2 Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut des Sciences et Ingénierie Chimiques, Lausanne, Switzerland (GRID:grid.5333.6) (ISNI:0000000121839049)
3 Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai, People’s Republic of China (GRID:grid.458506.a) (ISNI:0000 0004 0497 0637)
4 Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, School of Engineering, Hangzhou, People’s Republic of China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315)
5 North China Electric Power University, Beijing Key Laboratory of Novel Thin-Film Solar Cells, Beijing, People’s Republic of China (GRID:grid.261049.8) (ISNI:0000 0004 0645 4572)
6 Hubei Yangtze Memory Laboratories, Wuhan, People’s Republic of China (GRID:grid.494629.4); Hubei University, School of Microelectronics, Wuhan, People’s Republic of China (GRID:grid.34418.3a) (ISNI:0000 0001 0727 9022)