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Abstract
Highlights
The introduction of hydroiodic acid (HI) manipulates the dynamic conversion of PbI2 into highly coordinated species to optimize the nucleation and growth kinetics.
The addition of HI enables the fabrication of CsPbI3 perovskite quantum dots with reduced defect density, enhanced crystallinity, higher phase purity, and near-unity photoluminescence quantum yield.
The efficiency of CsPbI3 perovskite quantum dot solar cells was enhanced from 14.07% to 15.72% together with enhanced storage stability.
All-inorganic CsPbI3 quantum dots (QDs) have demonstrated promising potential in photovoltaic (PV) applications. However, these colloidal perovskites are vulnerable to the deterioration of surface trap states, leading to a degradation in efficiency and stability. To address these issues, a facile yet effective strategy of introducing hydroiodic acid (HI) into the synthesis procedure is established to achieve high-quality QDs and devices. Through an in-depth experimental analysis, the introduction of HI was found to convert PbI2 into highly coordinated [PbIm]2−m, enabling control of the nucleation numbers and growth kinetics. Combined optical and structural investigations illustrate that such a synthesis technique is beneficial for achieving enhanced crystallinity and a reduced density of crystallographic defects. Finally, the effect of HI is further reflected on the PV performance. The optimal device demonstrated a significantly improved power conversion efficiency of 15.72% along with enhanced storage stability. This technique illuminates a novel and simple methodology to regulate the formed species during synthesis, shedding light on further understanding solar cell performance, and aiding the design of future novel synthesis protocols for high-performance optoelectronic devices.
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Details
1 Southern University of Science and Technology, Department of Materials Science and Engineering, Shenzhen, People’s Republic of China (GRID:grid.263817.9) (ISNI:0000 0004 1773 1790); Soochow University, Institute of Functional Nano & Soft Materials (FUNSOM), Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)
2 University of British Columbia, Department of Electrical and Computer Engineering, Vancouver, Canada (GRID:grid.17091.3e) (ISNI:0000 0001 2288 9830)
3 Soochow University, Institute of Functional Nano & Soft Materials (FUNSOM), Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)
4 Southern University of Science and Technology, Department of Materials Science and Engineering, Shenzhen, People’s Republic of China (GRID:grid.263817.9) (ISNI:0000 0004 1773 1790)
5 Sungkyunkwan University, Department of Chemistry, Suwon, Republic of Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X)
6 Soochow University, Institute of Functional Nano & Soft Materials (FUNSOM), Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694); Soochow University, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)
7 Soochow University, Institute of Functional Nano & Soft Materials (FUNSOM), Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694); Soochow University, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)