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Abstract
The effects of the grain size of Pt bottom electrodes on the ferroelectricity of hafnium zirconium oxide (HZO) were studied in terms of the orthorhombic phase transformation. HZO thin films were deposited by chemical solution deposition on the Pt bottom electrodes with various grain sizes which had been deposited by direct current sputtering. All the samples were crystallized by rapid thermal annealing at 700 °C to allow a phase transformation. The crystallographic phases were determined by grazing incidence X-ray diffraction, which showed that the bottom electrode with smaller Pt grains resulted in a larger orthorhombic phase composition in the HZO film. As a result, capacitors with smaller Pt grains for the bottom electrode showed greater ferroelectric polarization. The smaller grains produced larger in-plane stress which led to more orthorhombic phase transformation and higher ferroelectric polarization.
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Details

1 Inha University, Department of Materials Science and Engineering, Incheon, South Korea (GRID:grid.202119.9) (ISNI:0000 0001 2364 8385)
2 Inha University, Department of Electrical Engineering at, Incheon, South Korea (GRID:grid.202119.9) (ISNI:0000 0001 2364 8385)
3 3D Convergence Center at Inha University, Incheon, South Korea (GRID:grid.202119.9) (ISNI:0000 0001 2364 8385)