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Abstract
Stretchable polymer semiconductors (PSCs) have seen great advancements alongside the development of soft electronics. But it remains a challenge to simultaneously achieve high charge carrier mobility and stretchability. Herein, we report the finding that stretchable PSC thin films (<100-nm-thick) with high stretchability tend to exhibit multi-modal energy dissipation mechanisms and have a large relative stretchability (rS) defined by the ratio of the entropic energy dissipation to the enthalpic energy dissipation under strain. They effectively recovered the original molecular ordering, as well as electrical performance, after strain was released. The highest rS value with a model polymer (P4) exhibited an average charge carrier mobility of 0.2 cm2V−1s−1 under 100% biaxial strain, while PSCs with low rS values showed irreversible morphology changes and rapid degradation of electrical performance under strain. These results suggest rS can be used as a parameter to compare the reliability and reversibility of stretchable PSC thin films.
Stretchable polymer semiconductors with high mechanical and electrical properties are challenging to develop. Wu et al. show that reversible molecular ordering under strain important for performance optimization and relative stretchability can be used to compare the relative strain tolerance of materials.
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1 Stanford University, Department of Chemical Engineering, Stanford, US (GRID:grid.168010.e) (ISNI:0000 0004 1936 8956)
2 Stanford University, Department of Electrical Engineering, Stanford, US (GRID:grid.168010.e) (ISNI:0000 0004 1936 8956)
3 Stanford University, Department of Chemical Engineering, Stanford, US (GRID:grid.168010.e) (ISNI:0000 0004 1936 8956); Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, US (GRID:grid.511397.8) (ISNI:0000 0004 0452 8128)
4 Corning Incorporated, Corning, US (GRID:grid.417796.a)
5 Stanford University, Department of Chemical Engineering, Stanford, US (GRID:grid.168010.e) (ISNI:0000 0004 1936 8956); Argonne National Laboratory, Nanoscience and Technology Division, Lemont, US (GRID:grid.187073.a) (ISNI:0000 0001 1939 4845)
6 Stanford University, Department of Chemical Engineering, Stanford, US (GRID:grid.168010.e) (ISNI:0000 0004 1936 8956); The University of Tokyo, Institute of Industrial Science, Meguro, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)
7 Stanford University, Department of Civil and Environmental Engineering, Stanford, US (GRID:grid.168010.e) (ISNI:0000 0004 1936 8956)
8 Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, US (GRID:grid.511397.8) (ISNI:0000 0004 0452 8128); University of Colorado Boulder, Department of Chemical and Biological Engineering and Renewable and Sustainable Energy Institute (RASEI), Boulder, US (GRID:grid.266190.a) (ISNI:0000 0000 9621 4564)