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Abstract
Ultraflexible organic photovoltaics have emerged as a potential power source for wearable electronics owing to their stretchability and lightweight nature. However, waterproofing ultraflexible organic photovoltaics without compromising mechanical flexibility and conformability remains challenging. Here, we demonstrate waterproof and ultraflexible organic photovoltaics through the in-situ growth of a hole-transporting layer to strengthen interface adhesion between the active layer and anode. Specifically, a silver electrode is deposited directly on top of the active layers, followed by thermal annealing treatment. Compared with conventional sequentially-deposited hole-transporting layers, the in-situ grown hole-transporting layer exhibits higher thermodynamic adhesion between the active layers, resulting in better waterproofness. The fabricated 3 μm-thick organic photovoltaics retain 89% and 96% of their pristine performance after immersion in water for 4 h and 300 stretching/releasing cycles at 30% strain under water, respectively. Moreover, the ultraflexible devices withstand a machine-washing test with such a thin encapsulation layer, which has never been reported. Finally, we demonstrate the universality of the strategy for achieving waterproof solar cells.
Waterproof flexible organic solar cells without compromising mechanical flexibility and conformability remains challenging. Here, the authors demonstrate in-situ growth of hole-transporting layer to strengthen interfacial and thermodynamic adhesion for better waterproofness in 3 μm-thick devices.
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1 RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0)
2 RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0); RIKEN, Thin-Film Device Laboratory, Wako, Japan (GRID:grid.7597.c) (ISNI:0000 0000 9446 5255)
3 The University of Tokyo, Department of Electrical Engineering and Information Systems, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)
4 The University of Tokyo, Department of Electrical Engineering and Information Systems, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); The University of Tokyo, Institute of Engineering Innovation, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)
5 RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0); The University of Tokyo, Department of Electrical Engineering and Information Systems, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)
6 Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, Wuhan, China (GRID:grid.33199.31) (ISNI:0000 0004 0368 7223)
7 RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0); RIKEN, Thin-Film Device Laboratory, Wako, Japan (GRID:grid.7597.c) (ISNI:0000 0000 9446 5255); The University of Tokyo, Department of Electrical Engineering and Information Systems, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)