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Abstract
Stretchable electronics that prevalently adopt chemically inert metals as sensing layers and interconnect wires have enabled high-fidelity signal acquisition for on-skin applications. However, the weak interfacial interaction between inert metals and elastomers limit the tolerance of the device to external friction interferences. Here, we report an interfacial diffusion-induced cohesion strategy that utilizes hydrophilic polyurethane to wet gold (Au) grains and render them wrapped by strong hydrogen bonding, resulting in a high interfacial binding strength of 1017.6 N/m. By further constructing a nanoscale rough configuration of the polyurethane (RPU), the binding strength of Au-RPU device increases to 1243.4 N/m, which is 100 and 4 times higher than that of conventional polydimethylsiloxane and styrene-ethylene-butylene-styrene-based devices, respectively. The stretchable Au-RPU device can remain good electrical conductivity after 1022 frictions at 130 kPa pressure, and reliably record high-fidelity electrophysiological signals. Furthermore, an anti-friction pressure sensor array is constructed based on Au-RPU interconnect wires, demonstrating a superior mechanical durability for concentrated large pressure acquisition. This chemical modification-free approach of interfacial strengthening for chemically inert metal-based stretchable electronics is promising for three-dimensional integration and on-chip interconnection.
Stretchable electronics require high interfacial strength between the inert metal and elastomer components for durable interconnection applications. Cao et al. show a chemical modification-free interfacial diffusion-induced cohesion strategy, using hydrophilic polyurethane to induce hydrogen bonding of gold grains.
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Details
; Liu, Xusheng 2 ; Qiu, Jie 1
; Yue, Zhifei 1 ; Li, Yang 1 ; Xu, Qian 2 ; Chen, Yan 2 ; Chen, Jiewen 1 ; Cheng, Hongfei 3 ; Xing, Guozhong 4
; Song, Enming 5 ; Wang, Ming 6
; Liu, Qi 7 ; Liu, Ming 6 1 Fudan University, Frontier Institute of Chip and System, State Key Laboratory of Integrated Chips and Systems, Zhangjiang Fudan International Innovation Center, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
2 Fudan University, Frontier Institute of Chip and System, State Key Laboratory of Integrated Chips and Systems, Zhangjiang Fudan International Innovation Center, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Fudan University, School of Microelectronics, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
3 Tongji University, School of Materials Science and Engineering, Shanghai, China (GRID:grid.24516.34) (ISNI:0000 0001 2370 4535)
4 Chinese Academy of Sciences, Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, University of the Chinese Academy of Sciences, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309)
5 Fudan University, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, State Key Laboratory of Integrated Chips and Systems, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
6 Fudan University, Frontier Institute of Chip and System, State Key Laboratory of Integrated Chips and Systems, Zhangjiang Fudan International Innovation Center, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Shanghai Qi Zhi Institute, Shanghai, China (GRID:grid.513236.0)
7 Fudan University, Frontier Institute of Chip and System, State Key Laboratory of Integrated Chips and Systems, Zhangjiang Fudan International Innovation Center, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Fudan University, School of Microelectronics, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Shanghai Qi Zhi Institute, Shanghai, China (GRID:grid.513236.0)




