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Abstract
Two-dimensional (2D) superlattices, formed by stacking sublattices of 2D materials, have emerged as a powerful platform for tailoring and enhancing material properties beyond their intrinsic characteristics. However, conventional synthesis methods are limited to pristine 2D material sublattices, posing a significant practical challenge when it comes to stacking chemically modified sublattices. Here we report a chemical synthesis method that overcomes this challenge by creating a unique 2D graphene superlattice, stacking graphene sublattices with monodisperse, nanometer-sized, square-shaped pores and strategically doped elements at the pore edges. The resulting graphene superlattice exhibits remarkable correlations between quantum phases at both the electron and phonon levels, leading to diverse functionalities, such as electromagnetic shielding, energy harvesting, optoelectronics, and thermoelectrics. Overall, our findings not only provide chemical design principles for synthesizing and understanding functional 2D superlattices but also expand their enhanced functionality and extensive application potential compared to their pristine counterparts.
Here, the authors report the synthesis and characterization of doped nanoporous graphene superlattices, showing their improved properties for electromagnetic shielding, energy harvesting, optoelectronic and thermoelectric applications.
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1 The Ohio State University, William G. Lowrie Department of Chemical and Biomolecular Engineering, Columbus, USA (GRID:grid.261331.4) (ISNI:0000 0001 2285 7943); Fudan University, Institution of Optoelectronic, Laboratory of Advanced Materials, Academy for Engineering & Technology, Department of Materials Science, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
2 Harvard University, Department of Chemistry and Chemical Biology, Cambridge, USA (GRID:grid.38142.3c) (ISNI:0000 0004 1936 754X); Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, USA (GRID:grid.20861.3d) (ISNI:0000 0001 0706 8890)
3 Fudan University, Institution of Optoelectronic, Laboratory of Advanced Materials, Academy for Engineering & Technology, Department of Materials Science, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
4 Fudan University, Institution of Optoelectronic, Laboratory of Advanced Materials, Academy for Engineering & Technology, Department of Materials Science, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443); Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, P. R. China (GRID:grid.458462.9) (ISNI:0000 0001 2226 7214)
5 Harvard University, Department of Chemistry and Chemical Biology, Cambridge, USA (GRID:grid.38142.3c) (ISNI:0000 0004 1936 754X); School of Engineering, Massachusetts Institute of Technology, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
6 The Ohio State University, William G. Lowrie Department of Chemical and Biomolecular Engineering, Columbus, USA (GRID:grid.261331.4) (ISNI:0000 0001 2285 7943)
7 Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, P. R. China (GRID:grid.458462.9) (ISNI:0000 0001 2226 7214)
8 Hunan University, College of Mechanical and Vehicle Engineering, Changsha, P. R. China (GRID:grid.67293.39)
9 University of Michigan, Department of Mechanical Engineering, Ann Arbor, USA (GRID:grid.214458.e) (ISNI:0000 0004 1936 7347)
10 Harvard University, School of Engineering and Applied Sciences, Cambridge, USA (GRID:grid.38142.3c) (ISNI:0000 0004 1936 754X)
11 The Ohio State University, William G. Lowrie Department of Chemical and Biomolecular Engineering, Columbus, USA (GRID:grid.261331.4) (ISNI:0000 0001 2285 7943); Harvard University, School of Engineering and Applied Sciences, Cambridge, USA (GRID:grid.38142.3c) (ISNI:0000 0004 1936 754X); The Ohio State University, Sustainability Institute, Columbus, USA (GRID:grid.261331.4) (ISNI:0000 0001 2285 7943)