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© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Organic dyes in natural waters jeopardize human health. Whether semiconductor materials can effectively degrade dyes has become a challenge for scientific research. Based on this, this study rationally prepared different nanocomposites to remove organic dyes effectively. Pure SnO2 quantum dots, ZnO nanosheets, and SnO2/ZnO (ZS) binary nanocomposites are prepared using the hydrothermal method. Subsequently, SnO2/ZnO@GO (ZSG) ternary composites containing different amounts of GO, i.e., ZSG-5, ZSG-15, and ZSG-25, are synthesized by an ultrasonic water bath method, in which ZS was coupled with GO to form Z-type heterojunctions. The ZSG-15 ternary composites exhibited excellent photocatalytic activity for the degradation of rhodamine B by simulating sunlight. The test results show that the degradation rate of ZSG-15 is about 7.6 times higher than ZnO. The increase in photocatalytic activity is attributed to the synergistic effect of SnO2 and GO to improve the separation efficiency of photogenerated carriers in ZnO. Notably, the large specific surface area of GO increases the reactive sites. Compared with binary nanocomposites, ZSG-15 broadens the response range to light while further accelerating the electron transport rate and improving the photoelectric stability.

Details

Title
Synergistic Enhancement of Carrier Migration by SnO2/ZnO@GO Heterojunction for Rapid Degradation of RhB
Author
Chen, Pengfei 1 ; Li, Jin 1 ; Wang, Jianing 1 ; Deng, Lihan 1   VIAFID ORCID Logo 

 School of Physical Science and Technology, Xinjiang University, Urumqi 830017, China; [email protected] (P.C.); [email protected] (J.W.); [email protected] (L.D.); Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830017, China 
First page
854
Publication year
2024
Publication date
2024
Publisher
MDPI AG
e-ISSN
14203049
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2931033495
Copyright
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.