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© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

With the continuous reduction of chip size, fluxless soldering has brought attention to high-density, three-dimensional packaging. Although fluxless soldering technology with formic acid (FA) atmosphere has been presented, few studies have examined the effect of the Pt catalytic, preheating time, and soldering pad on FA soldering for the Sn-58Bi solder. The results have shown that the Pt catalytic can promote oxidation–reduction and the formation of a large pore in the Sn-58Bi/Cu solder joint, which causes a decrease in shear strength. ENIG (electroless nickel immersion gold) improves soldering strength. The shear strength of Sn-58Bi/ENIG increases under the Pt catalytic FA atmosphere process due to the isolation of the Au layer on ENIG. The Au layer protects metal from corrosion and provides a good contact surface for the Sn-58Bi solder. The shear strength of the Sn-58Bi/ENIG joints under a Pt catalytic atmosphere improved by 44.7% compared to using a Cu pad. These findings reveal the improvement of the shear strength of solder joints bonded at low temperatures under the FA atmosphere.

Details

Title
Improvement of Solder Joint Shear Strength under Formic Acid Atmosphere at A Low Temperature
Author
He, Siliang 1 ; Jiang, Jian 2 ; Yu-An, Shen 3   VIAFID ORCID Logo  ; Mo, Lanqing 2 ; Bi, Yuhao 2 ; Wu, Junke 2 ; Chan, Guo 4 

 Key Laboratory of Microelectronic Packaging & Assembly Technology of Guangxi Education Department, School of Mechanical & Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China; [email protected] (S.H.); [email protected] (J.J.); [email protected] (L.M.); [email protected] (Y.B.); [email protected] (J.W.); Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China 
 Key Laboratory of Microelectronic Packaging & Assembly Technology of Guangxi Education Department, School of Mechanical & Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China; [email protected] (S.H.); [email protected] (J.J.); [email protected] (L.M.); [email protected] (Y.B.); [email protected] (J.W.) 
 Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan; [email protected] 
 Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China 
First page
1055
Publication year
2024
Publication date
2024
Publisher
MDPI AG
e-ISSN
19961944
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2955897120
Copyright
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.