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Abstract
Perovskite photovoltaics, typically based on a solution-processed perovskite layer with a film thickness of a few hundred nanometres, have emerged as a leading thin-film photovoltaic technology. Nevertheless, many critical issues pose challenges to its commercialization progress, including industrial compatibility, stability, scalability and reliability. A thicker perovskite film on a scale of micrometres could mitigate these issues. However, the efficiencies of thick-film perovskite cells lag behind those with nanometre film thickness. With the mechanism remaining elusive, the community has long been under the impression that the limiting factor lies in the short carrier lifetime as a result of defects. Here, by constructing a perovskite system with extraordinarily long carrier lifetime, we rule out the restrictions of carrier lifetime on the device performance. Through this, we unveil the critical role of the ignored lattice strain in thick films. Our results provide insights into the factors limiting the performance of thick-film perovskite devices.
The power conversion efficiencies of thick-film perovskite solar cells lag behind those with nanometre film thickness. Here, the authors rule out the restrictions of carrier lifetime on device performance and reveal the critical role of lattice strain in micron-scale thick perovskite films.
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1 Zhejiang University, State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Westlake Institute for Advanced Study, Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315)
2 Marmara University, Department of Physics, Istanbul, Turkey (GRID:grid.16477.33) (ISNI:0000 0001 0668 8422)
3 University of California, Department of Materials Science and Engineering and California NanoSystems Institute, Los Angeles, USA (GRID:grid.19006.3e) (ISNI:0000 0000 9632 6718)
4 Westlake Institute for Advanced Study, Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315)
5 Zhejiang University, State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
6 Southern University of Science and Technology, Department of Mechanical and Energy Engineering, Shenzhen, China (GRID:grid.263817.9) (ISNI:0000 0004 1773 1790)
7 Chinese Academy of Sciences, Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309)
8 Westlake University, Instrumentation and Service Center for Molecular Sciences, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315)
9 Zhejiang University, State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Shangyu Institute of Semiconductor Materials, Shaoxing, China (GRID:grid.13402.34)
10 Westlake Institute for Advanced Study, Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315); Zhejiang Baima Lake Laboratory Co., Ltd, Division of Solar Energy Conversion and Catalysis at Westlake University, Hangzhou, China (GRID:grid.494629.4) (ISNI:0000 0004 8008 9315)