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Abstract
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr3) with a thickness ranging from three to twenty layers (3–20 L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr3, 3.06 eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr3 and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the A
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1 University of Warsaw, Faculty of Physics, Institute of Experimental Physics, Warsaw, Poland (GRID:grid.12847.38) (ISNI:0000 0004 1937 1290)
2 National University of Singapore, Institute for Functional Intelligent Materials, Singapore, Singapore (GRID:grid.4280.e) (ISNI:0000 0001 2180 6431)
3 Wrocław University of Science and Technology, Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław, Poland (GRID:grid.7005.2) (ISNI:0000 0000 9805 3178)
4 University of Warsaw, Faculty of Physics, Institute of Theoretical Physics, Warsaw, Poland (GRID:grid.12847.38) (ISNI:0000 0004 1937 1290)
5 National University of Singapore, Institute for Functional Intelligent Materials, Singapore, Singapore (GRID:grid.4280.e) (ISNI:0000 0001 2180 6431); Peking University, School of Advanced Materials, Shenzhen Graduate School, Shenzhen, China (GRID:grid.11135.37) (ISNI:0000 0001 2256 9319)
6 Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880)
7 Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880)
8 National University of Singapore, Institute for Functional Intelligent Materials, Singapore, Singapore (GRID:grid.4280.e) (ISNI:0000 0001 2180 6431); National University of Singapore, Department of Materials Science and Engineering, Singapore, Singapore (GRID:grid.4280.e) (ISNI:0000 0001 2180 6431)