It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
The continued interest in 2D carbon allotropes stems from their unique structural and electronic characteristics, which are crucial for diverse applications. This work theoretically introduces PHOTH-Graphene (PHOTH-G), a novel 2D planar carbon allotrope formed by 4-5-6-7-8 carbon rings. PHOTH-G emerges as a narrow band gap semiconducting material with low formation energy, demonstrating good stability under thermal and mechanical conditions. This material has slight mechanical anisotropy with Young modulus and Poisson ratios varying between 7.08-167.8 GPa and 0.21-0.96. PHOTH-G presents optical activity restricted to the visible range. Li atoms adsorbed on its surface have a migration barrier averaging 0.38 eV.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 University of Brasília, Institute of Physics, Brasília, Brazil (GRID:grid.7632.0) (ISNI:0000 0001 2238 5157); University of Brasília, Computational Materials Laboratory, LCCMat, Institute of Physics, Brasília, Brazil (GRID:grid.7632.0) (ISNI:0000 0001 2238 5157)
2 University of Brasília, Department of Electrical Engineering, Faculty of Technology, Brasília, Brazil (GRID:grid.7632.0) (ISNI:0000 0001 2238 5157)
3 University of Brasília, Professional Postgraduate Program in Electrical Engineering - PPEE, Brasília, Brazil (GRID:grid.7632.0) (ISNI:0000 0001 2238 5157)