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© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2 etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer’s C/Si ratio and growth pressure significantly influence the overall quality of the epitaxial wafer. Specifically, an optimal C/Si ratio of 0.5 and a growth pressure of 70 Torr yield higher-quality epitaxial layers. Additionally, the pre-carbonization time and H2 etching time primarily affect the uniformity and surface quality of the epitaxial wafer, with a pre-carbonization time of 3 s and an H2 etching time of 3 min found to enhance the surface quality of the epitaxial layer.

Details

Title
Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth
Author
Yang, Shangyu 1   VIAFID ORCID Logo  ; Guo, Ning 1 ; Zhao, Siqi 1   VIAFID ORCID Logo  ; Li, Yunkai 1 ; Moyu Wei 1 ; Zhang, Yang 2 ; Liu, Xingfang 2 

 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; [email protected] (S.Y.); [email protected] (N.G.); [email protected] (S.Z.); [email protected] (Y.L.); [email protected] (M.W.); College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China 
 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; [email protected] (S.Y.); [email protected] (N.G.); [email protected] (S.Z.); [email protected] (Y.L.); [email protected] (M.W.); College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China 
First page
2612
Publication year
2024
Publication date
2024
Publisher
MDPI AG
e-ISSN
19961944
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
3067504223
Copyright
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.