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Abstract
Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and efficient detection are the most critical aspects. Although the generation and manipulation of skyrmions have been extensively studied, efficient electrical detection of mobile skyrmions by using techniques that are compatible with modern magnetic memory technology, remains to be adequately addressed. Here, through integrating magnetic multilayers that host nanoscale skyrmions, together with the magnetic tunnel junctions (MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by recording the time-dependent TMR ratios. Along with many recent developments, our results could advance the development of skyrmionic memory and logic devices.
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1 Tsinghua University, State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178); Tsinghua University, Frontier Science Center for Quantum Information, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
2 King Abdullah University of Science and Technology, Physical Science and Engineering Division, Thuwal, Saudi Arabia (GRID:grid.45672.32) (ISNI:0000 0001 1926 5090)
3 Nanjing University, Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X); Nanjing University, National Key Laboratory of Spintronics, Suzhou, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X)
4 Beijing Normal University, The Center for Advanced Quantum Studies and Department of Physics, Beijing, China (GRID:grid.20513.35) (ISNI:0000 0004 1789 9964)
5 National University of Defense Technology, College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, Changsha, China (GRID:grid.412110.7) (ISNI:0000 0000 9548 2110); National University of Defense Technology, Nanhu Laser Laboratory, Changsha, China (GRID:grid.412110.7) (ISNI:0000 0000 9548 2110)
6 The Chinese University of Hong Kong, School of Science and Engineering, Shenzhen, China (GRID:grid.10784.3a) (ISNI:0000 0004 1937 0482)
7 Zhejiang Hikstor Technology Co. LTD., Hangzhou, China (GRID:grid.10784.3a)
8 Tsinghua University, State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178); Tsinghua University, Frontier Science Center for Quantum Information, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178); Collaborative Innovation Center of Quantum Matter, Beijing, China (GRID:grid.495569.2)