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Abstract
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables—ferroelectric polarization and magnetization—we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.
The authors demonstrate voltage-controlled multiferroic magnon torque in BiFeO3 heterostructures, enabling reconfigurable logic-in-memory devices. This work highlights potential for low-power, scalable magnonics in room-temperature computing.
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1 Tsinghua University, School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
2 Tsinghua University, School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178); Tsinghua University, School of Materials Science and Engineering, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
3 Tsinghua University, School of Materials Science and Engineering, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
4 Tsinghua University, Institute for Advanced Study, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
5 University of Wisconsin-Madison, Department of Materials Science and Engineering, Madison, USA (GRID:grid.14003.36) (ISNI:0000 0001 2167 3675)
6 Cornell University, Laboratory of Atomic and Solid State Physics, Ithaca, USA (GRID:grid.5386.8) (ISNI:0000 0004 1936 877X)
7 Tsinghua University, Department of Physics, Beijing, China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)
8 AGH University of Science and Technology, Institute of Electronics, Kraków, Poland (GRID:grid.9922.0) (ISNI:0000 0000 9174 1488)
9 Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China (GRID:grid.9227.e) (ISNI:0000000119573309)
10 Cornell University, Laboratory of Atomic and Solid State Physics, Ithaca, USA (GRID:grid.5386.8) (ISNI:0000 0004 1936 877X); Kavli Institute at Cornell for Nanoscale Science, Ithaca, USA (GRID:grid.5386.8) (ISNI:000000041936877X)