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© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

The poly (vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) P(VDF-TrFE-CFE) terpolymer has been identified as a promising candidate for the effective conversion of low-frequency mechanical vibrations into electricity. In this study, we provide a comprehensive and systematic investigation of the solvent-dependent mechanical, microstructural, electrical, frictional properties and triboelectric output performance of a relaxor ferroelectric P(VDF-TrFE-CFE) terpolymer. The P(VDF-TrFE-CFE) terpolymer films obtained from high dipole moment solvents have a longer rod-shaped grain than those from low dipole moment solvents. The crystallinity, Young’s modulus and dielectric constant of P(VDF-TrFE-CFE) terpolymer become larger as the dipole moment of solvents increases, while the remnant polarization remains almost the same. The P(VDF-TrFE-CFE) terpolymer film obtained from the highest dipole moment solvent generates almost 1.55 times larger triboelectric charge than that obtained from the lowest moment. We attributed this large difference to the greatly enhanced lateral friction of terpolymer film obtained from high dipole moment solvents.

Details

Title
Solvent-Dependent Triboelectric Output Performance of Poly(vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) Terpolymer
Author
Hu, Ying Chieh 1 ; Ahn, Hyun Soo 2 ; Lee, Joo Hyeong 1 ; Kim, Kyung Hoon 2 ; Kim, Jong Hun 1   VIAFID ORCID Logo  ; Jung, Jong Hoon 2   VIAFID ORCID Logo 

 Department of Physics, Inha University, Incheon 22212, Republic of Korea; [email protected] (Y.C.H.); [email protected] (H.S.A.); [email protected] (J.H.L.); [email protected] (K.H.K.) 
 Department of Physics, Inha University, Incheon 22212, Republic of Korea; [email protected] (Y.C.H.); [email protected] (H.S.A.); [email protected] (J.H.L.); [email protected] (K.H.K.); Program in Semiconductor and Device, Inha University, Incheon 22212, Republic of Korea 
First page
664
Publication year
2024
Publication date
2024
Publisher
MDPI AG
e-ISSN
20734352
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
3084734446
Copyright
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.