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Abstract
Graphene is being increasingly used as an interesting transducer membrane in micro- and nanoelectromechanical systems (MEMS and NEMS, respectively) due to its atomical thickness, extremely high carrier mobility, high mechanical strength, and piezoresistive electromechanical transductions. NEMS devices based on graphene feature increased sensitivity, reduced size, and new functionalities. In this review, we discuss the merits of graphene as a functional material for MEMS and NEMS, the related properties of graphene, the transduction mechanisms of graphene MEMS and NEMS, typical transfer methods for integrating graphene with MEMS substrates, methods for fabricating suspended graphene, and graphene patterning and electrical contact. Consequently, we provide an overview of devices based on suspended and nonsuspended graphene structures. Finally, we discuss the potential and challenges of applications of graphene in MEMS and NEMS. Owing to its unique features, graphene is a promising material for emerging MEMS, NEMS, and sensor applications.
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1 Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246); Beijing Institute of Technology, Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246); Beijing Institute of Technology, School of Integrated Circuits and Electronics, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246)
2 Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246)
3 Beijing Institute of Technology, School of Integrated Circuits and Electronics, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246)
4 Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246); Beijing Institute of Technology, School of Integrated Circuits and Electronics, Beijing, China (GRID:grid.43555.32) (ISNI:0000 0000 8841 6246)
5 RWTH Aachen University, Chair of Electronic Devices, Faculty of Electrical Engineering and Information Technology, Aachen, Germany (GRID:grid.1957.a) (ISNI:0000 0001 0728 696X); AMO GmbH, Aachen, Germany (GRID:grid.461610.4) (ISNI:0000 0004 0450 8602)
6 North University of China, State Key Laboratory of Dynamic Measurement Technology, Taiyuan, China (GRID:grid.440581.c) (ISNI:0000 0001 0372 1100); North University of China, National Key Laboratory for Electronic Measurement Technology, School of Instrument and Electronics, Taiyuan, China (GRID:grid.440581.c) (ISNI:0000 0001 0372 1100)