Development of fin-LEDs for next-generation inorganic displays using face-selective dielectrophoretic assembly

Abstract

Micro-light-emitting diodes offer vibrant colors and energy-efficient performance, holding promise for next-generation inorganic displays. However, their widespread adoption requires the development of cost-effective chips and low-defect pixelation processes. Addressing these challenges, nanorod-light-emitting diodes utilize inkjet and dielectrophoretic assembly techniques. Nevertheless, the small volume and edge-directed emission of nanorod-light-emitting diodes necessitate brightness and light extraction improvements. As an alternative, we propose dielectrophoretic-friendly fin-light-emitting diodes, designed to enhance brightness and light extraction efficiency through face-selective dielectrophoretic assembly technology. Our results confirm the potential for next-generation inorganic displays, with a wafer utilization ratio exceeding 90%, a vertical assembly ratio of 91.3%, and a pixel production yield of 99.93%. Moreover, blue fin-light-emitting diodes achieve an external quantum efficiency of 9.1% and a brightness of 8640 cd m⁻² at 5.0 V, which, even at this early stage, are comparable to existing technologies.

Lee et al. report blue fin-LEDs with improved brightness and light extraction efficiency comparing to nanorod-LEDs by using a face-selective dielectrophoretic assembly technology. The wafer utilization ratio exceeds 90%, with a vertical assembly ratio of 91.3% and pixel production yield of 99.93%.