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© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Silicone gel, used in the packaging of high-voltage, high-power semiconductor devices, generates bubbles during the packaging process, which accelerates the degradation of its insulation properties. This paper establishes a testing platform for electrical treeing in silicone gel under pulsed electric fields, investigating the effect of pulse voltage amplitude on bubble development and studying the initiation and growth of electrical treeing in a silicone gel with different pulse edge times. The relationship between bubbles and electrical treeing in silicone gel materials is discussed. A two-dimensional plasma simulation model for bubble discharge in silicone gel under pulsed electric fields is developed, analyzing the internal electric field distortion caused by the response times of different ions and electrons. Additionally, the discharge current and its effects on silicone gel under pulsed electric fields are examined. By studying the influence of different pulse edge times, repetition frequencies, and temperatures on discharge current magnitude and ozone generation rates, the impact of electrical breakdown and chemical corrosion on the degradation of organic silicone gel under various operating conditions is analyzed. This study explores the macroscopic and microscopic mechanisms of dielectric performance degradation in organic silicone gel under pulsed electric fields, providing a basis for research on high-performance packaging materials and the development of high-voltage, high-power semiconductor devices.

Details

Title
Mechanism Analysis of Bubble Discharge Within Silicone Gels Under Pulsed Electric Field
Author
He, Dongxin 1 ; Zhang, Zhe 1 ; Wang, Guangzhu 2 ; Liu, Keming 3 ; Wang, Haochen 1 ; Xu, Zhe 1 ; Teyssedre, Gilbert 4   VIAFID ORCID Logo  ; Zhang, Yuantao 1   VIAFID ORCID Logo 

 School of Electrical Engineering, Shandong University, Jingshi Road 17923, Jinan 250061, China; [email protected] (D.H.); [email protected] (Z.Z.); [email protected] (H.W.); [email protected] (Z.X.) 
 Shandong Provincial Key Lab of UHV Technology and Modern Power Electronics Technology and Its Applications, School of Electrical Engineering, Shandong University, Jinan 250061, China; [email protected] 
 Nari Semiconductor Co., Ltd., Nanjing 210003, China; [email protected] 
 Laboratoire Plasma et Conversion d’ Energie, University of Toulouse, 31000 Toulouse, France; [email protected] 
First page
799
Publication year
2024
Publication date
2024
Publisher
MDPI AG
e-ISSN
23102861
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
3149596380
Copyright
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.