Localized Corrosion Behavior of T2 Copper and H62 Brass in NaCl Solution for Semiconductor Applications: An Electrochemical Study Using Wire Beam Electrode

Abstract

T2 copper and H62 brass are widely used in semiconductor applications, particularly in interconnects and packaging components of integrated circuits. With increasing demands for performance and reliability, the corrosion resistance of these materials, especially in saline environments, becomes critical. Localized corrosion can significantly reduce electrical conductivity, impacting the long-term reliability of semiconductor devices. This study investigates the localized corrosion behavior of T2 copper and H62 brass in a 3.5 wt.% NaCl solution using the wire beam electrode (WBE) technique. Electrochemical measurements, including potential, current density, and localized corrosion intensity (LP), were conducted over varying immersion times. Results show that T2 copper exhibits superior corrosion resistance and lower localized corrosion sensitivity compared to H62 brass, which shows more pronounced corrosion, particularly at the electrode edges. As immersion time increases, H62 brass exhibits higher potential differences and LP values. These findings highlight the impact of localized corrosion on the conductivity of copper alloys and underscore the importance of selecting materials with enhanced corrosion resistance for semiconductor applications.