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© The Author(s) 2024. Published by Cambridge University Press. This work is licensed under the Creative Commons Attribution License This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited. (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

A partition calculation method (PCM) for calculating the diffraction efficiency of multilayer Fresnel zone plate with high aspect ratio is proposed. In contrast to the traditional theory, PCM designs and evaluates Fresnel zone plate (FZP) considering material pairs, all zone widths, thicknesses and X-ray energy more completely. The results obtained through PCM are validated by comparing them with the complex amplitude superposition theory and coupled wave theory numerical results. The PCM satisfies the requirements of the theoretical investigation of FZP with small outermost zone width (drN) and large thickness (t). Combining proper numerical analysis with the experimental conditions will present a great potential to break through the imaging performance of X-ray microscopy.

Details

Title
Numerical analysis of X-ray multilayer Fresnel zone plates with high aspect ratios
Author
Zhang, Lingyun 1 ; Gao, Yazeng 1 ; Shuaiqiang Ming 2 ; Weier Lu 3   VIAFID ORCID Logo  ; Yang, Xia 4 

 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, People’s Republic of China; University of Chinese Academy of Sciences, Beijing, People’s Republic of China 
 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, People’s Republic of China 
 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, People’s Republic of China; University of Chinese Academy of Sciences, Beijing, People’s Republic of China; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing People’s Republic of China 
 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, People’s Republic of China; University of Chinese Academy of Sciences, Beijing, People’s Republic of China; University of Science and Technology of China, Hefei, People’s Republic of China; Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, People’s Republic of China 
Publication year
2024
Publication date
Sep 2024
Publisher
Cambridge University Press
ISSN
02630346
e-ISSN
1469803X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
3169150948
Copyright
© The Author(s) 2024. Published by Cambridge University Press. This work is licensed under the Creative Commons Attribution License This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited. (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.