Technological parameters of thin-film pulsed laser scribing for perovskite photovoltaics

Abstract

Over the past decade, the power conversion efficiency of halide perovskite solar cells has shown a rapid increase to 26.1%. The significant efficiency growth and the relative simplification of the technology for obtaining thin-film solar cells due to liquid printing methods determine the high potential for the low-cost perovskite solar cells manufacturing. However, efficient use of cell geometry is comparable to the size of standard crystalline-Si wafers (156:156 mm and more). Therefore, modular geometry similar to amorphous-Si solar cell approaches is used to scale perovskite solar cells. Serial electrical connection of thin-film cells requires precise processing of the conductive layers that form the device p-i-n structure. The subject of research is the development of a full pulsed laser scribing cycle for inverted perovskite solar cells. In this work, we propose a study of a laser-patterning technology In₂O₃:SnO₂ (ITO) conductive layer and a photoactive perovskite layer Cs_0,2(CH(NH₂)₂)_0,8PbI₃. Process regimes of transparent conducting electrodes based on ITO and halide perovskite layer Cs_0,2(CH(NH₂)₂)_0,8PbI₃ laser patterning were obtained. The optimal parameters for the multipass mode processing of ITO and perovskite layer were determined. The cell was electrically isolated at a scribe line width of 30 μm.