- Preview Available
- Scholarly Journal
Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique
Nanoscale Research Letters; Heidelberg Vol. 7, Iss. 1, (Dec 2012): 244.
DOI:10.1186/1556-276X-7-244
This is a limited preview of the full PDF
Try and log in through your library or institution to see if they have access.