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Copyright Copernicus GmbH 2008

Abstract

Verification of ESD safety on full chip level is a major challenge for IC design. Especially phenomena with their origin in the overall product setup are posing a hurdle on the way to ESD safe products. For stress according to the Charged Device Model (CDM), a stumbling stone for a simulation based analysis is the complex current distribution among a huge number of internal nodes leading to hardly predictable voltage drops inside the circuits.

This paper describes an methodology for Human Body Model (HBM) simulations with an improved ESD-failure coverage and a novel methodology to replace capacitive nodes within a resistive network by current sources for CDM simulation. This enables a highly efficient DC simulation clearly marking CDM relevant design weaknesses allowing for application of this software both during product development and for product verification.

Details

Title
ESD full chip simulation: HBM and CDM requirements and simulation approach
Author
Franell, E.; Drueen, S.; Gossner, H.; Schmitt-Landsiedel, D.
First page
245
Publication year
2008
Publication date
2008
Publisher
Copernicus GmbH
ISSN
16849965
e-ISSN
16849973
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
734477671
Copyright
Copyright Copernicus GmbH 2008