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Abstract
In0.53Ga0.47As/In0.52Al0.48As single quantum well (SQW) grown by molecular-beam epitaxy on the InP (001) substrate is investigated by using photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL). At the low temperature of 8 K and excitation intensity of 1 W/cm2, the emitting wavelength of QWs shifts from 1387 nm to 1537 nm when the well width increases from 5 nm to 50 nm, approaching the emitting wavelength of bulk In0.52Al0.48As. The emitting wavelength of QWs can be flexibly tailored by varying the thickness of the InGaAs layer.
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Details
1 School of Science, Beijing Jiaotong University, Beijing 100044, P. R. China; College of Physics Science & Technology, Hebei University, Baoding 071002, P.R. China
2 School of Science, Beijing Jiaotong University, Beijing 100044, P. R. China
3 College of Physics Science & Technology, Hebei University, Baoding 071002, P.R. China