Abstract

ZnO is an intrinsic semiconductor suitable for many optical applications. In this current study homemade DC magnetron sputtering was used to grow undoped ZnO and indium-doped ZnO (or IZO) thin films. The indium content was varied from a mole fraction ratio of In2O3 were 0 at% to 6 at%. The structure of IZO films analyzed by X-ray diffraction (XRD), and the optical properties were carried out using UV-visible and photoluminescence (PL) spectroscopies. The XRD results demonstrated that IZO maintained a hexagonal wurtzite structure with a (002) preferential orientation. The optical band gap increased with an increase in indium doped concentration. The PL spectrum exhibits a broadband blue emission from IZO films centered at 440 nm (2,82 eV), originating from the radiative recombination at the defect level. Interestingly, the intensity of blue emission increased with an increase in indium-doped concentration.

Details

Title
Blue luminescence of indium-doped ZnO thin films prepared by DC magnetron sputtering
Author
Sugianto, S 1 ; Nurilhilmah, N 1 ; Darsono, T 1 ; Sugiyanto, S 1 ; Aryanto, D 2 ; Isnaeni, I 2 

 Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Jl. Raya Sekaran Gunungpati 50299, Indonesia 
 Research Center for Physics, Indonesian Institute of Sciences, Puspitek Serpong Gd 440-442 Tangerang Selatan, Indonesia 
Publication year
2021
Publication date
Jul 2021
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2555380777
Copyright
© 2021. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.