Abstract

A stack of five Al(Ga)N-based quantum wells is investigated by combined laterally and depth resolved cathodoluminescence (CL) spectroscopy in order to distinguish lateral and vertical inhomogeneities of these wells. Transmission electron microscopy (TEM) micrographs provide data for the real sample structure, which enters into the Monte-Carlo simulation of the depth-resolved CL measurements to refine the depth resolution. The comparison of these CL measurements to the results of electron energy loss spectra (EELS) allows to identify local thickness variations of the lower three quantum wells to be the origin of two different luminescence contributions to the overall spectrum. The differentiation of the two groups of quantum wells by depth-resolved CL is demonstrated.

Details

Title
Combined depth-resolved cathodoluminescence spectroscopy and transmission electron microscopy on Al(Ga)N multi quantum well structures
Author
Hocker, Matthias 1   VIAFID ORCID Logo  ; Thonke, Klaus 1 ; Li, Yueliang 2   VIAFID ORCID Logo  ; Biskupek, Johannes 2 ; Kaiser, Ute 2 ; Jan-Patrick Scholz 3 ; Hubáček, Tomáš 3 ; Rettig, Oliver 3 ; Scholz, Ferdinand 3 

1  Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany 
2  Electron Microscopy Group of Material Science, University of Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany 
3  Institute of Functional Nanosystems, University of Ulm, Albert-Einstein-Allee 45, D-89081 Ulm, Germany 
Publication year
2021
Publication date
Mar 2021
Publisher
IOP Publishing
e-ISSN
2632959X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1088/2632-959X/abdad9
ProQuest document ID
2513084587
Copyright
© 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.