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Abstract
Transition metal dichalcogenides (TMDs) are promising two-dimensional (2D) materials, and MoS2 has been specifically utilized in electronic devices and integrated circuits. However, the direct synthesis of MoS2 on traditional semiconductors, such as silicon, remains challenging due to the hydrophobic surface of nonoxide wafers (e.g., Si, GaAs, and InP). Herein, a novel, facile, reliable, and one-step method for the direct synthesis of single-crystal MoS2 on a p-Si wafer via hybrid thermolysis is proposed. To demonstrate the applicability of the proposed method, a MoS2/p-Si heterojunction was fabricated and used for solar-driven hydrogen production. The as-fabricated n-MoS2/p-Si heterojunction exhibited a benchmark current density of −13.5 ± 1 mA/cm2 at 0 V and an onset potential of +0.02 V. This method reliably and efficiently produced high-quality MoS2 crystals on a wafer scale and is sufficiently simple to overcome the challenges associated with previous approaches. The method developed herein represents a tremendous advancement in the fabrication of 2D electronic devices.
2D semiconductors: Taming unruly crystals for green energy
Solar panels that catalyze the splitting of water into hydrogen fuel and oxygen can now be fabricated using a simple deposition process. Interfaces between two-dimensional molybdenum disulfide (2D-MoS2) and electron-poor silicon can split water using light, but only when the naturally random crystallization patterns of 2D-MoS2 are inhibited. Researchers led by Ho Won Jang from Seoul National University and Soo Young Kim at Chung-Ang University, Seoul, have improved uniformity in this ultrathin material by initially coating silicon wafers with a molybdenum oxide precursor that adheres in smooth layers. By depositing a second, sulfur-rich coating and then heating the sample, the team produced uniform 2D-MoS2/silicon junctions down to 10-nanometer scales. The transparent device maintained a water-splitting photocurrent for over forty hours without degradation, thanks to the corrosion-resistant nature of high-quality 2D-MoS2 crystals.
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Details



1 Chung-Ang University, School of Chemical Engineering and Materials Science, Integrative Research Center for Two-Dimensional Functional Materials, Institute of Interdisciplinary Convergence Research, Seoul, Republic of Korea (GRID:grid.254224.7) (ISNI:0000 0001 0789 9563)
2 Duy Tan University, Institute of Research and Development, Da Nang, Vietnam (GRID:grid.444918.4) (ISNI:0000 0004 1794 7022)
3 Seoul National University, Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul, Republic of Korea (GRID:grid.31501.36) (ISNI:0000 0004 0470 5905)
4 Korea University, Department of Materials Science and Engineering, Seoul, Republic of Korea (GRID:grid.222754.4) (ISNI:0000 0001 0840 2678)