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Web End = J Mater Sci: Mater Electron (2016) 27:12701277 DOI 10.1007/s10854-015-3885-3
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Web End = Doping and thickness variation inuence on the structuraland sensing properties of NiO lm prepared by RF-magnetron sputtering
Ehssan Salah Hassan1 Asrar Abdulmunem Saeed1 Abdulhussain K. Elttayef2
Received: 30 May 2015 / Accepted: 6 October 2015 / Published online: 28 October 2015 The Author(s) 2015. This article is published with open access at Springerlink.com
Abstract The NiO and NiOCu doped lms with various Cu contents of 5.68, 10.34, and 14.64 at%. Were deposited on a glass substrate with various thickness 50, 100, and 150 nm by RF-reactive magnetron sputtering technique. The effect of the thickness and the doping on the structural, electrical, and sensory properties of the lms was mainly investigated. The X-ray diffraction studies revealed that all the deposited lms were of single crystalline nature and exhibited cubic structure with preferential growth along 200 and only NiO peaks appear in the NiOCu lms and when the thickness increased from 50 to 150 nm, the grain size increases from 24.38 to 25.036 nm. Compositional analysis indicated that Cu content increased in the lm as the bonded chips increase in the target surface. The electrical resistivity of the NiO lm showed a high electrical resistivity 280 K X detected by a four point probe measurement and when the Cu content in the lms is 5.68 at%. The q value is reduced signicantly to 45.9 K X as Cu content is increased to 10.34 at%, and it further decreases to 25.3 K X when the Cu content further increases to14.64 at% the resistivity value decrease to 10.45 K X. The Hall measurement for all NiO and Cu-doped NiO lms shows p-type conduction and reduction in the mobility of charge carrier from 9.67 9 102 to 8.46 9 10 cm2/V s,
when the concentrations of the charge carriers increase from 4.30 9 1010 to 4.23 9 1013 cm-3. The sensory measurements for NiO and Cu-doped NiO lms, show that the 50 nm thickness has the highest sensitivity and response...