Effect of Fluorine Doping on Semiconductor to Metal-Like Transition and Optical Properties of Cadmium Oxide Thin Films Deposited by Sol–Gel Process

Abstract

Highly conducting fluorine doped n-type cadmium oxide thin films have been synthesized by sol–gel dip coating process on glass and Si substrates for various fluorine concentrations in the films. X-ray diffraction pattern confirmed the cubic CdO phase formation and SEM micrograph showed fine particles of CdO with size ~0.3 μm. F concentration in the films was varied from 1.8% to 18.7% as determined from energy dispersive X-ray analysis (EDX). The resistivity of the CdO films decreased with increase of F doping and increase of temperature below 14.6% of F, as usual for semiconductors. Above this F concentration the resistivity increased with increase of temperature like metals. Hall measurement showed very high carrier concentrations in the films lying in the range of ~2.93 × 10²⁰ cm⁻³ to 4.56 × 10²¹ cm⁻³. UV-VIS-NIR spectrum of the films showed the optical bandgap energy increased with increase of F doping and corresponding carrier concentrations obtained from Burstein-Moss shift also support the Hall measurement results.