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© 2020. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

pH sensors with low-power and strong anti-interference are extremely important for industrial online real-time detection. Herein, a narrow channel pH sensor based on Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) with package integrated Polydimethylsiloxane (PDMS) microchannels is proposed. The fabricated device has shown potential advantages in improving stability and reducing power consumption in response to pH changes of the solution. The performance of the pH sensor was demonstrated where the preliminary results showed an ultra-low power (<5.0 μW) at VDS = 1.0 V. Meanwhile, the sensitivity was 0.06 μA/V·pH in the range of pH = 2 to pH = 10, and the resolution of the sensor was 0.1 pH. The improvement in performance of the proposed sensor can be related to the narrow channel and microchannel, which can be attributed to better surface GaxOy in a microchannel with larger H+ and HO concentration on the sensing surface during the detection process. The low-power sensor with excellent stability can be widely used in various unattended or harsh environments, and it is more conducive to integration and intelligence, which lays the foundation for online monitoring in vivo.

Details

Title
Low-Power pH Sensor Based on Narrow Channel Open-Gated Al0.25Ga0.75N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels
First page
5282
Publication year
2020
Publication date
2020
Publisher
MDPI AG
e-ISSN
19961944
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2464926645
Copyright
© 2020. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.