Abstract

Diversified regulation of electrons have received much attention to realize a multi-functional transistor, and it is crucial to have a considerable control over the charge carriers in transistors. Ionic gel, as the dielectric material in transistors, facilitates a large capacitance, and high induced-carrier concentrations. This review presents the recent progress in ionic-gated transistors (IGTs) that have good mechanical stability as well as high physical and chemical stability. We first briefly introduce the various applications of IGTs in sensors, neuromorphic transistors, organic transistor circuits, and health detection. Finally, the future perspectives of IGTs are discussed and some possible solutions to the challenges are also proposed.

Details

Title
Recent advanced applications of ion-gel in ionic-gated transistor
Author
Wang Depeng 1 ; Zhao Shufang 1 ; Yin Ruiyang 1 ; Li, Linlin 1 ; Zheng, Lou 1   VIAFID ORCID Logo  ; Shen Guozhen 1   VIAFID ORCID Logo 

 University of Chinese Academy of Sciences, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronic Engineering, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419) 
Publication year
2021
Publication date
2021
Publisher
Nature Publishing Group
e-ISSN
23974621
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2540467820
Copyright
© The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.