Abstract

Results of indium phosphide structures research, showing the possibility of using it in the near inferred range (NIR) photocathodes of InP / InGaAs, are represented. An optimal method of obtaining the atomically clean indium phosphide surface was suggested. The activation process of indium phosphide was shown and its spectral characteristics were given. Researches of the photoemission dependence of the structure with surface grid electrode upon different bias voltages were carried out.

Details

Title
Spectral characteristics of InP photocathode with a surface grid electrode
Author
Myazin, N S 1 ; Smirnov, K J 2 ; Davydov, V V 3 ; Logunov, S E 1 

 Department of Quantum Electronics, Peter the Great Saint Petersburg Polytechnic University, Saint Petersburg 195251, Russia 
 OJSC “NRI “Electron”, Saint Petersburg, Russia; Department of photonics and communication lines, The Bonch-Bruevich Saint Petersburg State University of Telecommunications, Saint Petersburg 193232, Russia 
 Department of Quantum Electronics, Peter the Great Saint Petersburg Polytechnic University, Saint Petersburg 195251, Russia; Department of photonics and communication lines, The Bonch-Bruevich Saint Petersburg State University of Telecommunications, Saint Petersburg 193232, Russia 
Publication year
2017
Publication date
Nov 2017
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2574442677
Copyright
© 2017. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.