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Abstract

Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (ε = ε1 + iε2) and refractive index (N = n + ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2 eV to 6.2 eV at 300 K. From the analyses of second-energy derivatives of ε1 and ε2, interband transition energies (critical points) were determined. Absorption coefficient–photon energy dependency allowed us to achieve a band gap energy of 2.02 eV. Wemple and DiDomenico single effective oscillator and Spitzer–Fan models were accomplished and various optical parameters of the crystal were reported in the present work.

Details

Title
Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry
Author
Guler, I 1   VIAFID ORCID Logo  ; Isik, M 2 ; Gasanly, N M 3 ; Gasanova, L G 4 ; Babayeva, R F 5 

 Physics, Inter-Curricular Courses Department, Çankaya University, Ankara, Turkey 
 Department of Electrical and Electronics Engineering, Atilim University, Ankara, Turkey 
 Department of Physics, Middle East Technical University, Ankara, Turkey 
 Department of Physics, Baku State University, Baku, Azerbaijan 
 Department of Physics and Chemistry, Azerbaijan State University of Economics, Baku, Azerbaijan 
Pages
2418-2422
Publication year
2019
Publication date
Apr 2019
Publisher
Springer Nature B.V.
ISSN
0361-5235
e-ISSN
1543-186X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2176574124
Copyright
Journal of Electronic Materials is a copyright of Springer, (2019). All Rights Reserved.