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More recent PSP versions unify parameters for defining a binning, global, and local-model type into a single model type.
Penn State Philips (PSP) models are part of a new transistor-model class, which was created to solve RF design challenges like the need for RF transistors to operate across a wide range of bias conditions. PSP models satisfy these requirements by computing the surface potential in the gate region of a transistor's silicon/silicon-dioxide interface. Alternatively, the Berkeley Short-channel IGFET model (BSIM)-the industry's most widely used transistor model-is based on direct-current (DC) measurements of current/voltage and capacitance/ voltage relationships. Aside from having limitations...